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Nanoelectronics

In the nanoelectronics research domain, cutting-edge R&D is conducted, for innovative nanodevices, next-generation semiconductor nanofabrication and evaluation technologies, and the fusion of photonics and electronics, using the Super Cleanroom (SCR) as the core research facility. A large number of researchers from industries, universities and research institutes located in Japan and abroad, work on a broad range of R&D projects involving the development of devices, materials, and equipment. The research core facility provides an open innovation platform for the researchers to explore new businesses and technologies. In addition, an R&D support system is available in which highly skilled engineers support the R&D projects by providing a range of services related to common fundamental nanoelectronics technologies.



Advanced device manufacturing facility with the Super Cleanroom(SCR)

『スーパークリーンルーム(SCR)を有する最先端デバイス製造施設』の画像

The 3,000 m2 SCR is equipped with a set of nanodevice manufacturing machines compatible with 300 mm wafers. Many R&D projects were conducted at this facility. Current projects, aiming to reduce the power consumption of LSIs (large-scale integrations), include R&D of non-volatile memory devices (spintronics, atom transfer switches, and phase change devices) that can be integrated into a low-voltage CMOS circuit, nanocarbon-based, low-resistance wiring technologies, and three-dimensional LSIs. Numerous process and measurement equipment at the SCR is available for shared use by external users.



Leading-edge research on ultra-low voltage devices

『原子移動型スイッチ』の画像
Through-Silicon Via

Toward realizing a low-carbon society, a variety of research and development is carried out for reducing power consumption of LSIs (large-scale integrations). We have been developing new structured CMOS (complementary metal-oxide semiconductor) devices that operate at 0.4 V, atom transfer switches, magnetic change devices, and phase change devices that employ resistance-change non-volatile memories, and nanocarbon-based low-resistance wiring technologies. Furthermore, we are also conducting research on spintronics-based LSIs and 3D LSIs.



R&D center for three-dimensional packaging technology

『シリコン貫通電極(TSV)』の画像
Through-Silicon Via

We aim to apply IoT to society by creating smaller, power-saving, and high-performance IoT devices. To achieve this, we are developing three-dimensional packaging technology using through-silicon vias (TSVs) as a way to integrate semiconductor devices without relying on device miniaturization.



Leading R&D center for silicon photonics

『32×32光スイッチ』の画像
32x32 optical switch device

We are aiming to develop next-generation, ultra-low-power, information and communication systems and ecosystems. To this end, we are conducting research on innovative technology based on the fusion of photonics and electronics, such as highly integrated optical switches, and highly efficient signal transmission technology.



Development of next-generation semiconductor device
production technology

『ミニマルファブ』の画像
Minimal Fab

Projects are under way to develop sub-10 nm patterning technology using EUV (extreme ultraviolet) lithography, which is a promising nextgeneration lithography technology, and to develop "Minimal Fab, "a super compact semiconductor production system, which reduces the investment cost to one thousandth and is equipped with half-inch wafers and humansized production machines. As for the latter, we already have developed a set of machines to fabricate a CMOS device, and they are capable of rapid manufacturing.



Projects